? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c50a i dm t c = 25 c, pulse width limited by t jm 264 a i ar t c = 25 c66a e ar t c = 25 c75mj e as t c = 25 c 4.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c f c mounting force 22...130/5...30 n/lb weight 5 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, high dv/dt, low q g low intrinsic r g , low t rr features z double metal process for low gate resistance z international standard packages z epoxy meet ul 94 v-0, flammability classification z avalanche energy and current rated z fast intrinsic rectifier advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8 ma 2.0 4.5 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = i t 85 m ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source tab = drain ds99076(8/03) v dss = 500 v i d25 =50 a r ds(on) =85m ? ? ? ? ? t rr 250 ns ixfr 66n50q2 isoplus247 tm (ixfr) g d s (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 66n50q2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t , pulse test 30 44 s c iss 6800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 270 pf t d(on) 32 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 16 ns t d(off) r g = 1.0 ? (external), 60 ns t f 10 ns q g(on) 199 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 42 nc q gd 92 nc r thjc 0.25 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 66 a i sm repetitive; pulse width limited by t jm 264 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 1 0 a i f = 25a, -di/dt = 100 a/ s, v r = 100 v note: test current i t = 33a isoplus247 outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2005 ixys all rights reserved ixfr 66n50q2 fig. 2. extended output characteristics @ 25 o c 0 20 40 60 80 100 120 140 160 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 02468101214 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v 3.5v 4.5v 5.5v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v 5.5v 4.5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 66a i d = 33a v gs = 10v fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 20 40 60 80 100 120 140 160 i d - amperes r d s ( o n ) - normalize d t j = 125 c t j = 25 c v gs = 10v fig. 6. drain current vs. case tem perature 0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 66n50q2 fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 250v i d = 33a i g = 10ma fig. 7. input adm ittance 0 10 20 30 40 50 60 70 80 90 100 3 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 c 25 c -40 c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 i d - amperes g f s - siemens t j = -40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 160 180 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. for w ar d-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 c t c = 25 c r ds(on) limit 10ms 25 s
? 2005 ixys all rights reserved ixfr 66n50q2 fig. 13. maximum transient thermal resistance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - c / w
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